Pulsed Laser Deposition

Modern Pulsed Laser Deposition (PLD) system containing all state-of-the-art equipment for high-quality thin film deposition: high-pressure & high-voltage RHEED, laser substrate heating and in-situ laser energy control. The PLD allows the synthesis of materials and heterosystems for oxide electronics. An UHV tunnel allows in-vacuum sample transfer between the PLD system and the adjacent ADOMBE system and Ion-Beam-Etching system.

Device Specifications

Load-lock for substrates and targets
Number of PLD targets 6
Substrate size up to 10x10 mm²
Temperature range 25-1500 °C
Process gases Ar2, O2, N2
Laser KrF excimer laser at 248 nm, 750 mJ