Modern Pulsed Laser Deposition (PLD) system containing all state-of-the-art equipment for high-quality thin film deposition: high-pressure & high-voltage RHEED, laser substrate heating and in-situ laser energy control. The PLD allows the synthesis of materials and heterosystems for oxide electronics. An UHV tunnel allows in-vacuum sample transfer between the PLD system and the adjacent ADOMBE system and Ion-Beam-Etching system.
|Load-lock for substrates and targets|
|Number of PLD targets||6|
|Substrate size||up to 10x10 mm²|
|Temperature range||25-1500 °C|
|Process gases||Ar2, O2, N2|
|Laser||KrF excimer laser at 248 nm, 750 mJ|